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| CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor Spec. No. : C307N3 Issued Date : 2003.06.27 Revised Date : Page No. : 1/4 BTP5401N3 Description * The BTP5401N3 is designed for general purpose amplification. * Large IC , IC( Max) = -0.6A * High BVCEO, BVCEO= -150V * Complementary to BTN5551N3. Symbol BTP5401N3 Outline SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RJA Tj Tstg Limits -160 -150 -5 -0.6 225 556 150 -55~+150 Unit V V V A mW C/W C C BTP5401N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) 1 *VBE(sat) 2 hFE 1 hFE 2 hFE 3 fT Cob Min. -160 -150 -5 50 56 50 100 Typ. Max. -50 -50 -0.2 -0.5 -1 -1 390 300 6 Unit V V V nA nA V V V V MHz pF Spec. No. : C307N3 Issued Date : 2003.06.27 Revised Date : Page No. : 2/4 Test Conditions IC=-100A IC=-1mA IE=-10A VCB=-120V VEB=-3V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA VCE=-10V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test: Pulse Width 380s, Duty Cycle2% Classification Of hFE 2 Rank Range K 56~120 P 82~180 Q 120~270 R 180~390 BTP5401N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) HFE@VCE=5V Spec. No. : C307N3 Issued Date : 2003.06.27 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 1000 VCE(SAT)@IC=10IB Current Gain---HFE 100 100 10 0.1 1 10 100 Collector Current---IC(mA) 10 0.1 1 10 100 Collector Current---IC(mA) Saturation Voltage vs Collector Current 1000 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1 Cutoff Frequency vs Collector Current FT@VCE=12V VBE(SAT)@IC=10IB 100 0.1 1 10 100 1000 Collector Current---IC(mA) 0.1 1 10 Collector Current---IC(mA) 100 Power Derating Curve 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 200 Ambient Temperature --- Ta( ) BTP5401N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension A L 3 B 1 2 S Spec. No. : C307N3 Issued Date : 2003.06.27 Revised Date : Page No. : 4/4 Marking: TE 2L V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector C D K H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTP5401N3 CYStek Product Specification |
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